DocumentCode
1425663
Title
50-nm channel nMOSFET/SIMOX with an ultrathin 2- or 6-nm thick silicon layer and their significant features of operations
Author
Omura, Y. ; Kurihara, K. ; Takahashi, Y. ; Ishiyama, T. ; Nakajima, Y. ; Izumi, K.
Author_Institution
NTT Syst. Electron. Lab., Atsugi, Japan
Volume
18
Issue
5
fYear
1997
fDate
5/1/1997 12:00:00 AM
Firstpage
190
Lastpage
193
Abstract
This paper demonstrates mesoscopic scale nMOSFET´s fabricated by Separation by IMplanted OXygen (SIMOX) technology on a trial basis and describes their explicit quantum-mechanical transport phenomena: enhanced threshold voltage in an extremely thin silicon-on-insulator (SOI) structure and enhanced short-channel effect at room temperature as well as a weak interference (WI) effect at relatively high temperatures (/spl sim/40 K), which are characterized specifically in extremely thin SOI short-channel devices.
Keywords
MOSFET; SIMOX; mesoscopic systems; quantum interference devices; SIMOX technology; SOI short-channel device; Si; mesoscopic scale nMOSFET; quantum-mechanical transport; threshold voltage; ultrathin silicon layer; weak interference; Geometry; Interference; Laboratories; MOSFET circuits; Oxygen; Quantum mechanics; Silicon on insulator technology; Substrates; Temperature; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.568758
Filename
568758
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