DocumentCode
1425732
Title
High-temperature, high-voltage operation of pulse-doped diamond MESFET
Author
Vescan, A. ; Gluche, P. ; Ebert, W. ; Kohn, E.
Author_Institution
Dept. of Electron. Devices & Circuits, Ulm Univ., Germany
Volume
18
Issue
5
fYear
1997
fDate
5/1/1997 12:00:00 AM
Firstpage
222
Lastpage
224
Abstract
The fabrication and operation of a pulse-doped diamond metal-semiconductor field-effect transistor (MESFET) is presented showing a usable source drain voltage of 70 V and no breakdown up to 100 V at 350/spl deg/C operating temperature. A channel sheet concentration of 8.5×10/sup 12/ cm/sup -2/ could be fully modulated leading to a maximum transconductance of 0.22 mS/mm, although full activation of the boron acceptor had not been reached. For an optimized device structure, with reduced gate length below 0.25 μm and full activation, more than 10 W/mm RF-power density can be predicted.
Keywords
diamond; doping profiles; elemental semiconductors; power MESFET; 0.22 mS/mm; 0.25 micron; 100 V; 350 to 450 C; 70 V; B acceptor; C:B; HV operation; RF-power density; fabrication; high-temperature operation; optimized device structure; pulse-doped diamond MESFET; source drain voltage; Boron; Breakdown voltage; Doping; FETs; Fabrication; Insulation; MESFETs; Ohmic contacts; Plasma temperature; Substrates;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.568772
Filename
568772
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