Title :
Large enhancement of interband tunneling current densities of over 105 A/cm2 in In/sub 0.53/Ga/sub 0.47/As-based surface tunnel transistors
Author :
Uemura, T. ; Baba, T.
Author_Institution :
Fundamental Res. Labs., NEC Corp., Ibaraki, Japan
fDate :
5/1/1997 12:00:00 AM
Abstract :
In/sub 0.53/Ga/sub 0.47/As-based Surface Tunnel Transistors (STT´s), which control an interband tunneling current between an n-type channel and a p-type drain by an insulated gate, are investigated with the goal of increasing the tunneling current-density for high-speed operation. The fabricated devices enhanced an interband tunneling current density by a factor of 102 compared to the conventional GaAs-STT´s due to a smaller bandgap energy and a lighter electron effective mass, and exhibited a clear gate-controlled negative differential resistance (NDR) characteristics with maximum tunneling current densities of over 105 A/cm2. The cutoff frequency (FT) and maximum oscillation frequency (fmax) of a fabricated device with a 1.0-μm gate length were estimated to be 7.9 GHz and 20 GHz, respectively, in the NDR region.
Keywords :
III-V semiconductors; current density; effective mass; gallium arsenide; indium compounds; insulated gate field effect transistors; microwave field effect transistors; negative resistance devices; tunnel transistors; 1 micron; 20 GHz; 7.9 GHz; In/sub 0.53/Ga/sub 0.47/As; bandgap energy; electron effective mass; gate-controlled negative NDR characteristics; high-speed operation; insulated gate; interband tunneling current densities; n-type channel; negative differential resistance; p-type drain; surface tunnel transistors; Current density; Cutoff frequency; Diodes; Effective mass; Electrons; Gallium arsenide; Insulation; Photonic band gap; Substrates; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
