VCSELs bonded directly to foundry fabricated GaAs smart pixel arrays

Author

Rui Pu ; Hayes, E.M. ; Jurrat, R. ; Wilmsen, C.W. ; Choquette, K.D. ; Hou, H.Q. ; Geib, K.M.

Author_Institution

Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA

Volume

9

Issue

12

fYear

1997

Firstpage

1622

Lastpage

1624

Abstract

This letter reports the flip-chip bonding of an 8×8 array of free standing VCSELs to a foundry fabricated GaAs metal-semiconductor field-effect transistor (MESFET) smart pixel array. The VCSELs have oxide defined apertures and are co-planar bonded directly to smart pixels which perform the selection function of a data filter. The V/sub th/ and series resistance of the VCSELs were on average approximately 2.1 V and 250 /spl Omega/, respectively, which indicates that good electrical contact was obtainable with this process. The I/sub th/ ranged between 2-4 mA, with a corresponding output power of between 400 μW and >1.0 mW depending on aperture size.

Keywords

MESFET integrated circuits; flip-chip devices; gallium arsenide; integrated optoelectronics; laser cavity resonators; optical fabrication; semiconductor laser arrays; smart pixels; surface emitting lasers; 1 mW; 2 to 4 mA; 2.1 V; 250 ohm; 400 muW; 8/spl times/8 array; GaAs; GaAs MESFET smart pixel array; GaAs smart pixel arrays; VCSEL; aperture size; co-planar bonded; data filter; direct bonding; flip-chip bonding; foundry fabricated; free standing VCSEL; good electrical contact; optical computing; output power; oxide defined apertures; parallel architecture; selection function; series resistance; Apertures; Bonding; Electric resistance; FETs; Filters; Foundries; Gallium arsenide; MESFETs; Smart pixels; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.643289

Filename

643289