• DocumentCode
    1425891
  • Title

    Practical Design and Implementation Procedure of an Interleaved Boost Converter Using SiC Diodes for PV Applications

  • Author

    Ho, Carl Ngai-Man ; Breuninger, Hannes ; Pettersson, Sami ; Escobar, Gerardo ; Serpa, Leonardo Augusto ; Coccia, Antonio

  • Author_Institution
    Corp. Res., ABB Switzerland, Ltd., Baden-Dättwil, Switzerland
  • Volume
    27
  • Issue
    6
  • fYear
    2012
  • fDate
    6/1/2012 12:00:00 AM
  • Firstpage
    2835
  • Lastpage
    2845
  • Abstract
    The implementation of an interleaved boost converter (IBC) using SiC diodes for photovoltaic (PV) applications is presented in this paper. The converter consists of two switching cells sharing the PV panel output current. Their switching patterns are synchronized with 180° phase shift. Each switching cell has a SiC Schottky diode and a CoolMOS switching device. The SiC diodes provide zero reverse-recovery current ideally, which reduces the commutation losses of the switches. Such an advantage from the SiC diodes enables higher efficiency and higher power density of the converter system by reducing the requirement of the cooling system. This paper presents also an optimization study of the size and efficiency of the IBC. Based on 1) the steady-state characteristic of the topology; 2) the static and dynamic characteristics of the switching cells; 3) the loss model of the magnetic components; and 4) the cooling system design, the paper provides a set of design criteria, procedures, and experimental results for a 2.5 kW IBC prototype using SiC diodes.
  • Keywords
    phase shifters; photovoltaic power systems; power convertors; silicon compounds; CoolMOS switching device; PV applications; Schottky diode; commutation losses; converter consists; interleaved boost converter; phase shift; photovoltaic applications; switching cells; zero reverse recovery current ideally; Inverters; Schottky diodes; Silicon carbide; Steady-state; Switches; Topology; Diode; MOSFET; interleaved boost converter (IBC); photovoltaic (PV); power semiconductor; silicon carbide (SiC);
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/TPEL.2011.2178269
  • Filename
    6134679