Status of device-qualified GaAs substrate technology for GaAs integrated circuits

Author

Thomas, R. Noel ; McGuigan, Shaun ; Eldridge, Graeme W. ; Barrett, Donovan L.

Author_Institution

Westinghouse Res. & Dev. Center, Pittsburgh, PA, USA

Volume

76

Issue

7

fYear

1988

fDate

7/1/1988 12:00:00 AM

Firstpage

778

Lastpage

791

Abstract

A review is presented of the current technical status of large-diameter GaAs crystal growth, the effects of residual impurities, stoichiometric defects and crystalline imperfections on the electrical properties of undoped semi-insulating GaAs, and the effectiveness of Group III and V isovalent, lattice-hardening dopants in yielding dislocation-free, semi-insulating GaAs crystals. Factors related to crystal growth, postgrowth annealing, and the preparation of ultraflat, damage-free GaAs wafers, which can significantly improve the performance and yields of directly implanted devices and monolithic circuits are discussed.<>

Keywords

III-V semiconductors; annealing; monolithic integrated circuits; semiconductor growth; GaAs; crystal growth; crystalline imperfections; directly implanted devices; dislocation-free semi-insulating crystals; isovalent dopants; lattice-hardening dopants; postgrowth annealing; residual impurities; stoichiometric defects; yields; Crystalline materials; Crystallization; Gallium arsenide; Integrated circuit technology; Microwave devices; Microwave integrated circuits; Microwave technology; Semiconductor materials; Silicon; Substrates;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/5.7143

Filename

7143