DocumentCode :
1426000
Title :
Author :
Zuo, Qingyun ; Long, Shibing ; Yang, Shiqian ; Liu, Qi ; Shao, Lubing ; Wang, Qin ; Zhang, Sen ; Li, Yingtao ; Wang, Yan ; Liu, Ming
Author_Institution :
Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China
Volume :
31
Issue :
4
fYear :
2010
fDate :
4/1/2010 12:00:00 AM
Firstpage :
344
Lastpage :
346
Abstract :
A memory cell based on n+-Si/ZrO2/Pt structure with self-rectifying properties is demonstrated for write-once-read-many-times (WORM) memory application. The fresh devices can be set to a low resistance state (LRS) as an antifuse and keep in LRS permanently with a rectification ratio exceeding 104. The memory devices show a large on/off ratio of about 106 and narrow resistance distributions before and after programming. The different transport mechanisms of forward and reverse currents are studied, which are responsible for this reliable self-rectifying characteristic. The demonstrated memory cell with self-rectifying properties has potential application in high-density passive crossbar WORM memory.
Keywords :
MIS devices; electrical resistivity; elemental semiconductors; platinum; random-access storage; rectification; silicon; zirconium compounds; LRS; Si-ZrO2-Pt; WORM memory application; antifuse-type nonvolatile WORM memory devices; forward currents; low resistance state; memory cell; on-off ratio; rectification ratio; reverse currents; self-rectifying effect; transport mechanisms; write-once-read-many-times memory application; $hbox{ZrO}_{2}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2039849
Filename :
5419995
Link To Document :
