DocumentCode
1426395
Title
Extraction From Conductance-Frequency Measurements using a Transmission-Line Model in Weak Inversion of  characteristics by a comparison of experiments with simulations using a Schrodinger-Poisson solver. Using a transmission-line network, the channel response and the density of interface states can be accurately modeled from the conductance-frequency characteristics. This technique is applied to HfO<sub>2</sub>/SiO<sub>2</sub> dielectric MOSFETs with polysilicon and poly/TiN metal gates deposited and annealed at identical temperature. In such a condition, the density of interface states is twice as large as for a TiN metal gate.</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>MOSFET; capacitance measurement; electric admittance measurement; frequency measurement; hafnium compounds; titanium compounds; transmission line theory; TiN-HfO<sub>2</sub>; conductance frequency measurements; density of interface states; nMOSFET; small signal capacitance measurements; transmission line model; weak inversion; Capacitance; Frequency measurement; Interface states; Logic gates; Resistance; Tin; Channel resistance; conductance; high- <formula formulatype=)
$k$ ; interface states; inversion;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2011.2179657
Filename
6135493
Link To Document