An Analytical Broadband Model for Millimeter-Wave Transformers in Silicon Technologies

Author

Leite, Bernardo ; Kerhervé, Eric ; Bégueret, Jean-Baptiste ; Belot, Didier

Author_Institution

IMS Lab., Univ. of Bordeaux, Talence, France

Volume

59

Issue

3

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

582

Lastpage

589

Abstract

A lumped element model to represent the behavior of millimeter-wave (mm-wave) integrated transformers is presented. Details on the topology allowing efficient mm-wave operation are given. The model presents a 2- π architecture and contains the equations to evaluate its components values. These equations depend on both technological and geometric characteristics of the transformer. The model is validated through experimental data of a set of 65-nm CMOS and 130-nm BiCMOS transformers. A very close agreement is shown for both S-parameter and inductance values up to 110 GHz.

Keywords

BiCMOS integrated circuits; S-parameters; elemental semiconductors; field effect MIMIC; silicon; transformers; 2-π architecture; BiCMOS transformers; S-parameter; Si; analytical broadband model; lumped element model; millimeter-wave integrated transformers; size 130 nm; size 65 nm; Capacitance; Conductors; Couplings; Inductance; Mathematical model; Semiconductor device modeling; Substrates; Electromagnetic (EM) simulation; integrated passive components; millimeter-wave (mm-wave) passive components; passive component modeling; transformers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2180909

Filename

6135494