• DocumentCode
    1426592
  • Title

    Output power saturation characteristics of the CW-operated semiconductor Raman laser

  • Author

    Suto, K. ; Kimura, T. ; Saito, T.

  • Author_Institution
    Fac. of Eng., Tohoku Univ., Sendai, Japan
  • Volume
    145
  • Issue
    4
  • fYear
    1998
  • fDate
    8/1/1998 12:00:00 AM
  • Firstpage
    243
  • Lastpage
    247
  • Abstract
    The intensity noise of a CW-operated semiconductor Raman laser waveguide structure with AlxGa1-xP cladding layers has been measured and it has been found that the noise spectral intensity in the frequency range 10 Hz-100 kHz was reduced to 34 dB below that of the incident pump light under saturation conditions. This effect has been interpreted as coupling between the pump light, the first Stokes light and the second Stokes light, assuming a very small contribution of nonlinear absorption
  • Keywords
    III-V semiconductors; Raman lasers; gallium compounds; laser noise; optical pumping; optical saturation; semiconductor lasers; waveguide lasers; 10 Hz to 100 kHz; AlxGa1-xP cladding layers; AlGaP; CW-operated semiconductor Raman laser; CW-operated semiconductor Raman laser waveguide structure; GaP; first Stokes light; frequency range; incident pump light; intensity noise; noise spectral intensity; nonlinear absorption; output power saturation characteristics; pump light; saturation conditions; second Stokes light; waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2433
  • Type

    jour

  • DOI
    10.1049/ip-opt:19982146
  • Filename
    714600
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1426592