Improved Electrostatic Discharge Protection in GaN-Based Vertical Light-Emitting Diodes by an Internal Diode

Author

Jeong, Hwan Hee ; Lee, Sang Youl ; Bae, Jung-Hyeok ; Choi, Kwang Ki ; Song, June-O ; Son, Sung Jin ; Lee, Yong-Hyun ; Seong, Tae-Yeon

Author_Institution

Dept. of LED Bus., LG Innotek, Paju, South Korea

Volume

23

Issue

7

fYear

2011

fDate

4/1/2011 12:00:00 AM

Firstpage

423

Lastpage

425

Abstract

We first fabricated GaN-based vertical light-emitting diodes (LEDs) with electrostatic discharge (ESD) protection internal diode. Despite the reduced emitting area due to the internal diode, the LEDs with the internal diode give a forward voltage of 3.42 V at 350 mA similar to that (3.40) of LEDs without the internal diode. It is shown that the output power of the LEDs with the internal diode is reduced by about 6% at 350 mA compared to reference LEDs without the internal diode. It is, however, further shown that the LEDs without the internal diode give a yield of 0% at the reverse voltages above 400 V, while the LEDs with the internal diode show a yield of ~ 90% at reverse voltages of 2-4 kV.

Keywords

III-V semiconductors; electrostatic discharge; gallium compounds; light emitting diodes; wide band gap semiconductors; current 350 mA; electrostatic discharge protection; internal diode; vertical light emitting diodes; voltage 3.2 V; Electrostatic discharge (ESD) protection; gallium nitride; vertical light-emitting diodes (LEDs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2011.2106204

Filename

5688221