1.5 V 1.8 GHz bandpass amplifier

Author

Chan, I.L. ; Do, M.A. ; Yeo, K.S. ; Ma, J.-G.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

Volume

147

Issue

6

fYear

2000

fDate

12/1/2000 12:00:00 AM

Firstpage

331

Lastpage

333

Abstract

To have a fully integrated communication system in CMOS, a CMOS bandpass amplifier which combines the functions of low noise amplifier (LNA) and bandpass filter (BPF) is necessary. In a conventional bandpass amplifier, a Q-enhancement circuit is required to compensate for the resistive loss in the integrated inductor. The Q-enhancement circuit, however, being active, increases the power consumption (P_d) and noise figure (NF) of the system. In the paper, a new bandpass amplifier has been proposed which can achieve the required Q without an additional Q-enhancement circuit. Comparison with other recent designs shows that the proposed amplifier has the lowest P_d and the best noise performance. Based on the CSM 0.25 μm CMOS process, the bandpass amplifier has a gain of 25.3 dB, a Q of 30, an NF of 3.56 dB and a P_d of 35.7 mW at 1.8 GHz

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; Q-factor; UHF amplifiers; UHF integrated circuits; band-pass filters; field effect MMIC; inductors; integrated circuit noise; 0.25 micron; 1.5 V; 1.8 GHz; 25.3 dB; 3.56 dB; 35.7 mW; Q-enhancement circuit; bandpass amplifier; bandpass filter; integrated inductor; low noise amplifier; noise performance; resistive loss;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:20000607

Filename

895962