Title :
Frequency dependence of GaAs FET equivalent circuit elements extracted from the measured two-port S parameters
Author :
Yeom, Kyung-Whan ; Ha, Tae-Suk ; Ra, Jung-Woong
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
fDate :
7/1/1988 12:00:00 AM
Abstract :
An eight-element equivalent circuit for GaAs FETs is used to calculate their element values from the eight measured data values of the two-port S parameters exactly at each frequency. Three element values vary with frequency and two additional small inductances are needed to account for the frequency dependence. A ten-element equivalent circuit including these correction inductances closely predicts the wafer measured S parameters up to 18 GHz.<>
Keywords :
III-V semiconductors; S-parameters; equivalent circuits; field effect transistors; FET equivalent circuit; GaAs; correction inductances; data values; element values; frequency dependence; inductances; measured two-port S parameters; ten-element equivalent circuit; Computer errors; Electrical resistance measurement; Equivalent circuits; FETs; Feedback circuits; Frequency dependence; Frequency measurement; Gallium arsenide; Lead; Scattering parameters;
Journal_Title :
Proceedings of the IEEE
