Title :
Recombination lasing in heliumlike silicon: a possible path to the water window
Author :
Apruzese, J.P. ; Kepple, P.C. ; Davis, J. ; Pender, J.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fDate :
10/1/1988 12:00:00 AM
Abstract :
A major goal of current X-ray laser research is the achievement of gain in the 23.3-43.7 Å wavelength region, known as the `water window´. Silicon is the lowest atomic number element for which all the heliumlike 3-2 transitions lie in this region. The authors examine the fundamental kinetics of recombination lasing in this species, and conclude that the Si XIII 1s3d1D 2-1s2p1P1 line at 39.1 Å is an attractive candidate for recombination-pumped lasing. Attainment of gain in this line is somewhat more energetically favorable than for the hydrogenic Al XIII 3-2 transitions, but radiative trapping may be somewhat more troublesome than for H-like Al
Keywords :
X-ray lasers; ion lasers; laser transitions; silicon; 23.3 to 43.7 Å; Si; Si XIII; X-ray laser research; gain; kinetics; radiative trapping; recombination lasing; recombination-pumped lasing; water window; Artificial intelligence; Atom lasers; Electrons; Kinetic theory; Laser transitions; Plasmas; Silicon; Spontaneous emission; Stationary state; X-ray lasers;
Journal_Title :
Plasma Science, IEEE Transactions on