Title :
980 nm high power, high slope efficiency distributed feedback lasers with nonabsorbing mirrors
Author :
Lammert, R.M. ; Ungar, J.E. ; Oh, S.W. ; Qi, H. ; Chen, J.S. ; Chaim, N. Bar
Author_Institution :
Ortel Corp., Alhambra, CA, USA
fDate :
8/20/1998 12:00:00 AM
Abstract :
High-power InGaAs-GaAs distributed feedback lasers with nonabsorbing mirrors have been fabricated. These devices exhibit over 215 mW of single frequency CW optical power at a bias current of 300 mA and an operating temperature of 25°C. Low threshold currents of 15 mA and high slope efficiencies of 0.9 W/A near threshold are also obtained
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser mirrors; laser transitions; semiconductor lasers; 15 mA; 215 mW; 25 C; 300 mA; 980 nm; InGaAs-GaAs; InGaAs-GaAs DFB lasers; distributed feedback lasers; high power semiconductor lasers; high slope efficiency; nonabsorbing mirrors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981162
