• DocumentCode
    1427428
  • Title

    Highly accurate measurement of reflectivity and optical absorption in distributed Bragg reflectors using wafer fused resonator

  • Author

    Berseth, C.-A. ; Syrbu, A.V. ; Lakovlev, V.P. ; Dehaese, O. ; Rudra, A. ; Kapon, E.

  • Author_Institution
    Inst. for Micro- and Optoelectron., Fed. Inst. of Technol., Lausanne, Switzerland
  • Volume
    34
  • Issue
    17
  • fYear
    1998
  • fDate
    8/20/1998 12:00:00 AM
  • Firstpage
    1666
  • Lastpage
    1667
  • Abstract
    A new experimental method for the accurate determination of optical absorption in distributed Bragg reflectors is demonstrated. It is based on the linewidth of the optical transmission through a symmetric resonator fabricated by wafer fusion of two samples of the same mirror. The optical absorption of a Zn-doped GaAs/Al65Ga 35As Bragg mirror is found to be 48±3cm-1 at 1539 nm
  • Keywords
    distributed Bragg reflector lasers; 1539 nm; GaAs:Zn-Al65Ga35As; Zn-doped GaAs/Al65Ga35As Bragg mirror; distributed Bragg reflector; optical absorption measurement; optical transmission linewidth; reflectivity measurement; wafer fused resonator;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981148
  • Filename
    715281