DocumentCode
1427428
Title
Highly accurate measurement of reflectivity and optical absorption in distributed Bragg reflectors using wafer fused resonator
Author
Berseth, C.-A. ; Syrbu, A.V. ; Lakovlev, V.P. ; Dehaese, O. ; Rudra, A. ; Kapon, E.
Author_Institution
Inst. for Micro- and Optoelectron., Fed. Inst. of Technol., Lausanne, Switzerland
Volume
34
Issue
17
fYear
1998
fDate
8/20/1998 12:00:00 AM
Firstpage
1666
Lastpage
1667
Abstract
A new experimental method for the accurate determination of optical absorption in distributed Bragg reflectors is demonstrated. It is based on the linewidth of the optical transmission through a symmetric resonator fabricated by wafer fusion of two samples of the same mirror. The optical absorption of a Zn-doped GaAs/Al65Ga 35As Bragg mirror is found to be 48±3cm-1 at 1539 nm
Keywords
distributed Bragg reflector lasers; 1539 nm; GaAs:Zn-Al65Ga35As; Zn-doped GaAs/Al65Ga35As Bragg mirror; distributed Bragg reflector; optical absorption measurement; optical transmission linewidth; reflectivity measurement; wafer fused resonator;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981148
Filename
715281
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