Title :
Surface acoustic waves in a gallium arsenide-conducting layer structure
Author :
Zaitsev, B.D. ; Kuznetsova, I.E.
Author_Institution :
Inst. of Radio Eng. & Electron., Acad. of Sci., Saratov, Russia
Abstract :
The electron attenuation and SAW velocity versus the surface conductivity and magnetic field induction for the structure consisting of the [001] cut anisotropic GaAs substrate and an isotropic conducting layer was calculated. The SAW propagated along the [110] piezoactive direction distinguished by the greatest electromechanical coupling coefficient.
Keywords :
III-V semiconductors; acoustic materials; gallium arsenide; piezoelectric semiconductors; surface conductivity; ultrasonic velocity; GaAs; GaAs conducting layer structure; SAW propagation; SAW velocity; [001] cut anisotropic GaAs substrate; [110] piezoactive direction; electromechanical coupling coefficient; electron attenuation; isotropic conducting layer; magnetic field induction; surface acoustic waves; surface conductivity; Acoustic propagation; Acoustic waves; Anisotropic magnetoresistance; Attenuation; Conductivity; Electrons; Gallium arsenide; III-V semiconductor materials; Magnetic fields; Surface acoustic waves;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
