• DocumentCode
    1427571
  • Title

    Nearly ideal InP/GaAsSb/InP double heterojunction bipolar transistors with ballistically launched collector electrons

  • Author

    Matine, N. ; Dvorak, M.W. ; Bolognesi, C.R. ; Xu, X. ; Hu, J. ; Watkins, S.P. ; Thewalt, M.L.W.

  • Author_Institution
    Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
  • Volume
    34
  • Issue
    17
  • fYear
    1998
  • fDate
    8/20/1998 12:00:00 AM
  • Firstpage
    1700
  • Lastpage
    1702
  • Abstract
    Near-ideal abrupt heterojunction InP-GaAsSb-InP double heterojunction bipolar transistors (DHBTs) have been implemented. The GaAsSb conduction band edge is measured to be 0.18 eV higher than the InP conduction band edge. Resulting in a ballistic electron launcher collector that is free of the blocking effect normally associated with GaInAs DHBTs. The collector and base current ideality factors were 1.00 and 1.05, respectively. Also a very low collector offset voltage VCE,OFF=14 mV was measured for 5×12 μm2 self-aligned DHBTs
  • Keywords
    III-V semiconductors; conduction bands; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; GaAsSb conduction band edge; InP/GaAsSb/InP DHBT; ballistically launched collector electrons; double heterojunction bipolar transistors; near-ideal abrupt heterojunction;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981160
  • Filename
    715305
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1427571