Title :
All-MOS voltage-to-current converter
Author_Institution :
EXAR Corp., Fremont, CA, USA
fDate :
1/1/2001 12:00:00 AM
Abstract :
A new resistorless voltage-to-current converter utilizing only MOS transistors to achieve voltage-to-current conversion with less than ±0.5% nonlinearity is described. The circuit uses MOS transistors in linear and saturation regions to produce an output current linearly related to the input voltage. The output current is proportional to the carrier mobility tracking the process variations. This circuit is suitable for submicron technologies where the availability of a linear resistor with moderate sheet resistance is not guaranteed. The circuit is fabricated using 0.6-μm n-well CMOS technology, consumes less than 200 μA, and occupies 200 mm2 of area
Keywords :
CMOS analogue integrated circuits; convertors; 0.6 micron; 200 muA; MOS transistors; MOS voltage-to-current converter; linear region; n-well CMOS technology; resistorless voltage-to-current converter; saturation region; submicron technologies; CMOS technology; Circuits; Frequency conversion; MOSFETs; Mirrors; Operational amplifiers; Phase locked loops; Resistors; Voltage; Voltage-controlled oscillators;
Journal_Title :
Solid-State Circuits, IEEE Journal of
