DocumentCode
1427652
Title
All-MOS voltage-to-current converter
Author
Fotouhi, Bahram
Author_Institution
EXAR Corp., Fremont, CA, USA
Volume
36
Issue
1
fYear
2001
fDate
1/1/2001 12:00:00 AM
Firstpage
147
Lastpage
151
Abstract
A new resistorless voltage-to-current converter utilizing only MOS transistors to achieve voltage-to-current conversion with less than ±0.5% nonlinearity is described. The circuit uses MOS transistors in linear and saturation regions to produce an output current linearly related to the input voltage. The output current is proportional to the carrier mobility tracking the process variations. This circuit is suitable for submicron technologies where the availability of a linear resistor with moderate sheet resistance is not guaranteed. The circuit is fabricated using 0.6-μm n-well CMOS technology, consumes less than 200 μA, and occupies 200 mm2 of area
Keywords
CMOS analogue integrated circuits; convertors; 0.6 micron; 200 muA; MOS transistors; MOS voltage-to-current converter; linear region; n-well CMOS technology; resistorless voltage-to-current converter; saturation region; submicron technologies; CMOS technology; Circuits; Frequency conversion; MOSFETs; Mirrors; Operational amplifiers; Phase locked loops; Resistors; Voltage; Voltage-controlled oscillators;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.896241
Filename
896241
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