Title :
p-channel modulation-doped GaSb field-effect transistors
Author :
Luo, L.F. ; Longenbach, K.F. ; Wang, W.I.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Abstract :
GaSb p-channel modulation-doped field-effect transistors based on a p-AlSb0.9As0.1/p-AlSb/GaSb structure have been fabricated. Transconductances as high as 50 ms/mm at room temperature and 220 to 283 ms/mm at 77 K were obtained for 1 mu m gate-length devices. These 77 K transconductances represent the highest values reported for any compound p-channel heterojunction field-effect transistors.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; 1 micron; 77 K; AlSbAs-AlSb-GaSb; III-V semiconductors; gate-length devices; heterojunction field-effect transistors; p-channel modulation-doped field-effect transistors; transconductances;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910297
