• DocumentCode
    1427802
  • Title

    p-channel modulation-doped GaSb field-effect transistors

  • Author

    Luo, L.F. ; Longenbach, K.F. ; Wang, W.I.

  • Author_Institution
    Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
  • Volume
    27
  • Issue
    5
  • fYear
    1991
  • Firstpage
    472
  • Lastpage
    474
  • Abstract
    GaSb p-channel modulation-doped field-effect transistors based on a p-AlSb0.9As0.1/p-AlSb/GaSb structure have been fabricated. Transconductances as high as 50 ms/mm at room temperature and 220 to 283 ms/mm at 77 K were obtained for 1 mu m gate-length devices. These 77 K transconductances represent the highest values reported for any compound p-channel heterojunction field-effect transistors.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; 1 micron; 77 K; AlSbAs-AlSb-GaSb; III-V semiconductors; gate-length devices; heterojunction field-effect transistors; p-channel modulation-doped field-effect transistors; transconductances;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910297
  • Filename
    64332
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1427802