Double-bonded InP-InGaAsP vertical coupler 1:8 beam splitter

Author

Raburn, M. ; Bin Liu ; Abraham, P. ; Bowers, J.E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

12

Issue

12

fYear

2000

Firstpage

1639

Lastpage

1641

Abstract

A novel three-layer double-bonded InP-InGaAsP waveguide vertical coupler 1:8 beam splitter is demonstrated. The strongly coupled waveguides allow a 583-μm device length, more than 100 times shorter than that of the equivalent horizontal coupler. The device illustrates the use of multiple vertical-layer optical interconnects for three-dimensional routing of optical signals.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; optical beam splitters; optical directional couplers; optical fabrication; optical interconnections; optical planar waveguides; semiconductor heterojunctions; 583 mum; InP-InGaAsP; InP-InGaAsP vertical coupler 1:8 beam splitter; beam splitter; double-bonded vertical coupler; equivalent horizontal coupler; multiple vertical-layer optical interconnects; optical signals; strongly coupled waveguides; three-dimensional routing; three-layer double-bonded waveguide vertical coupler; Etching; Indium phosphide; Optical coupling; Optical devices; Optical interconnections; Optical waveguides; Photonic integrated circuits; Semiconductor waveguides; Substrates; Wafer bonding;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.896333

Filename

896333