Title :
Techniques for the measurement of source and drain series resistance in m.o.s. transistors
Author_Institution :
General Post Office, Research Department, London, UK
fDate :
10/1/1971 12:00:00 AM
Abstract :
Three methods for measuring the source and drain resistance of m.o.s. transistors operating in the unsaturated region are described. The results obtained on a number of simple m.o.s. transistors are presented to illustrate and compare each method and to indicate the significance of such measurements.
Keywords :
field effect transistors; metal-insulator-semiconductor devices; resistance measurement; MOS; comparison; measurement methods; measurements; results; significance; source and drain resistance; techniques; transistors; unsaturated region;
Journal_Title :
Electrical Engineers, Proceedings of the Institution of
DOI :
10.1049/piee.1971.0261
