Author :
Syrbu, A.V. ; Iakovlev, V.P. ; Berseth, C.-A. ; Dehaese, O. ; Rudra, A. ; Kapon, E. ; Jacquet, J. ; Boucart, J. ; Stark, C. ; Gaborit, F. ; Sagnes, I. ; Harmand, J.C. ; Raj, R.
Abstract :
1.52 μm double fused InGaAsP/AlGaAs vertical cavity surface emitting lasers with in situ built-in lateral current confinement were fabricated using a localised wafer fusion process. A threshold current of 2.5 mA at 4 V was obtained for devices with a 10×10 μm2 current aperture. These devices operate CW up to 30°C. The width of the dominant mode is less than 0.1 nm and the sidemode suppression ratio is 30 dB
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor lasers; surface emitting lasers; 1.52 micrometre; 2.5 mA; 30 degC; 4 V; CW operation; InGaAsP-AlGaAs; built-in lateral current confinement; current aperture; dominant mode; localised fusion; sidemode suppression ratio; threshold current; vertical cavity lasers;
