• DocumentCode
    1427969
  • Title

    Bit-selective read and write with coincident current scheme in spin-valve/diode MRAM cells

  • Author

    Boeve, H. ; Das, J. ; Bruynseraede, C. ; De Boeck, J. ; Borghs, G.

  • Author_Institution
    IMEC, Leuven, Belgium
  • Volume
    34
  • Issue
    18
  • fYear
    1998
  • fDate
    9/3/1998 12:00:00 AM
  • Firstpage
    1754
  • Lastpage
    1755
  • Abstract
    An array of magnetic memory cells, each consisting of a spin-valve structure in series with a GaAs diode, is demonstrated. Bit-addressability in the matrix, based on a DRAM-like floor plan, is proved for both write and read operations using a coincident current scheme. By implementing a series diode in the memory cell, read signals up to 10 mV were measured
  • Keywords
    giant magnetoresistance; magnetic storage; magnetoresistive devices; random-access storage; semiconductor diodes; 10 mV; GaAs; GaAs diode; MRAM; bit addressability; coincident current; giant magnetoresistance; magnetic memory cell array; magnetoresistive random access memory; spin valve;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981250
  • Filename
    715368
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1427969