Title :
Low-frequency noise and hysteresis in graphene field-effect transistors on oxide S.A.
Author :
Imam, Syed Akhtar ; Sabri, S. ; Szkopek, Thomas
Author_Institution :
McGill Univ., Montreal, QC, Canada
Abstract :
The authors report measurements of low-frequency noise and hysteresis in graphene monolayer and bilayer field-effect transistors (FETs) fabricated on 90 and 290 nm oxidised silicon substrates. The authors observe hysteresis induced by stressing the oxide up to fields of 2 MV/cm and have characterised the hysteresis against stress time and sample temperature. Low-frequency current noise with a 1/f 2 spectral density arises from the drift of neutrality point voltage, and subsequent drift of graphene FET channel current. A simple model of charge trapping at the graphene-oxide interface and thermally activated ion motion accounts for the temperature dependence of the observed hysteresis.
Keywords :
field effect transistors; graphene; hysteresis; monolayers; nanoelectronics; 1-f 2 spectral density; C; FET; channel current; charge trapping; field-effect transistors; graphene bilayer; graphene monolayer; hysteresis; low-frequency current noise; neutrality point voltage; oxidised silicon substrates; size 290 nm; size 90 nm; stress time; thermally activated ion motion;
Journal_Title :
Micro & Nano Letters, IET
DOI :
10.1049/mnl.2009.0052