Title :
Measurement of anisotropic fatigue life in micrometre-scale single-crystal silicon specimens
Author :
Ikehara, T. ; Tsuchiya, Takao
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
The fatigue life of micrometre-scale single-crystal silicon specimens was measured using the resonant vibration of a micromachined resonator device. Two kinds of identically shaped specimens oriented to ??110?? and ??100?? crystal directions on the (001) plane were tested. On the deflection-life relationship, the deflection amplitudes of the ??100?? oriented specimens were approximately 1.56 times higher than that of ??110?? oriented ones at the same fatigue life. Observation by scanning electron microscope showed that the fracture surfaces differed depending on the specimen orientation and deflection amplitude. The life-shortening effect of the surface roughness was also demonstrated.
Keywords :
elemental semiconductors; fatigue; mechanical variables measurement; micromechanical resonators; scanning electron microscopy; silicon; vibrations; (001) plane; ??100?? crystal direction; ??110?? crystal direction; Si; anisotropic fatigue life measurement; life-shortening effect; micromachined resonator device; micrometre-scale single-crystal silicon specimens; resonant vibration; scanning electron microscope; surface roughness;
Journal_Title :
Micro & Nano Letters, IET
DOI :
10.1049/mnl.2009.0073
