Title :
High-speed pin ultraviolet photodetectors fabricated on GaN
Author :
Carrano, J.C. ; Li, T. ; Brown, D.L. ; Grudowski, P.A. ; Eiting, C.J. ; Dupuis, R.D. ; Campbell, J.C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fDate :
9/3/1998 12:00:00 AM
Abstract :
The authors report very high-speed GaN-based ultraviolet photodetectors using a pin device structure. The best devices have rise times of -90 ps and bandwidths of -1.6 GHz at 30 V. This is the fastest speed for a GaN-based photodetector reported to date
Keywords :
III-V semiconductors; gallium compounds; p-i-n photodiodes; photodetectors; ultraviolet detectors; -30 V; 1.6 GHz; 90 ps; GaN; bandwidth; high-speed pin ultraviolet photodetector; rise time;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981272
