• DocumentCode
    1428087
  • Title

    High-flux high-efficiency transparent-substrate AlGaInP/GaP light-emitting diodes

  • Author

    Hofler, G.E. ; Carter-Coman, C. ; Krames, M.R. ; Gardner, N.F. ; Kish, F.A. ; Tan, T.S. ; Loh, B. ; Posselt, J. ; Collins, D. ; Sasser, G.

  • Author_Institution
    Opto-electron. Div., Hewlett-Packard Co., San Jose, CA, USA
  • Volume
    34
  • Issue
    18
  • fYear
    1998
  • fDate
    9/3/1998 12:00:00 AM
  • Firstpage
    1781
  • Lastpage
    1782
  • Abstract
    Data are presented demonstrating red-orange-yellow spectrum (Al xGa1-x)0.5In0.5P/GaP high-power light-emitting diode (LED) lamps which emit 10-20 lm of flux while simultaneously maintaining luminous efficiencies of ⩾20 lm/W. The flux emitted by these devices represents an improvement of about five times compared to conventional high-brightness transparent-substrate (AlxGa1-x)0.5In 0.5P/GaP LED lamps
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; AlGaInP-GaP; brightness; flux; high power light emitting diode lamp; luminous efficiency; red-orange-yellow spectrum; transparent substrate LED;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981217
  • Filename
    715387
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1428087