DocumentCode :
1428087
Title :
High-flux high-efficiency transparent-substrate AlGaInP/GaP light-emitting diodes
Author :
Hofler, G.E. ; Carter-Coman, C. ; Krames, M.R. ; Gardner, N.F. ; Kish, F.A. ; Tan, T.S. ; Loh, B. ; Posselt, J. ; Collins, D. ; Sasser, G.
Author_Institution :
Opto-electron. Div., Hewlett-Packard Co., San Jose, CA, USA
Volume :
34
Issue :
18
fYear :
1998
fDate :
9/3/1998 12:00:00 AM
Firstpage :
1781
Lastpage :
1782
Abstract :
Data are presented demonstrating red-orange-yellow spectrum (Al xGa1-x)0.5In0.5P/GaP high-power light-emitting diode (LED) lamps which emit 10-20 lm of flux while simultaneously maintaining luminous efficiencies of ⩾20 lm/W. The flux emitted by these devices represents an improvement of about five times compared to conventional high-brightness transparent-substrate (AlxGa1-x)0.5In 0.5P/GaP LED lamps
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; AlGaInP-GaP; brightness; flux; high power light emitting diode lamp; luminous efficiency; red-orange-yellow spectrum; transparent substrate LED;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19981217
Filename :
715387
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1428087
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