Influence of GaSb and AlGaInAsSb as Barrier Material on $\\sim$ 2.8- $\\mu$ m GaSb-Based Diode Laser P

Author

Lehnhardt, T. ; Herrmann, A. ; Kamp, M. ; Höfling, S. ; Worschech, L. ; Forchel, A.

Author_Institution

Wilhelm-Conrad-Rontgen-Res. Center for Complex Mater. Syst., Univ. of Wurzburg, Wurzburg, Germany

Volume

23

Issue

6

fYear

2011

fDate

3/15/2011 12:00:00 AM

Firstpage

371

Lastpage

373

Abstract

GaSb-based diode lasers emitting at a wavelength of 2.8 μm have been grown. The devices feature GaSb or Al_0.21 Ga_0.58 In_0.21 As_0.20 Sb_0.80 barrier layers for the quantum wells, respectively. The transparency current density, modal gain, internal absorption, and characteristic temperature have been investigated on both devices. Since the barrier layers serve at the same time as waveguide for the laser light, the optical properties and the impact on device performance have been determined. The refractive index for Al_0.21Ga_0.58In_0.21As_0.20Sb_0.80 has been estimated to be 3.26.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; refractive index; semiconductor quantum wells; AlGaInAsSb; GaSb; barrier material; diode laser; internal absorption; modal gain; quantum wells; refractive index; transparency current density; wavelength 2.8 mum; AlGaInAsSb; antimonide-based lasers; gas sensing; midinfrared lasers; quantum-well (QW) lasers; quinternary barrier; refractive index; semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2011.2106487

Filename

5688437

Influence of GaSb and AlGaInAsSb as Barrier Material on 2.8- m GaSb-Based Diode Laser P

Lehnhardt, T. ; Herrmann, A. ; Kamp, M. ; Höfling, S. ; Worschech, L. ; Forchel, A.

jour

Influence of GaSb and AlGaInAsSb as Barrier Material on $\\sim$ 2.8- $\\mu$ m GaSb-Based Diode Laser P