DocumentCode
1428095
Title
SiGe retiming high-gain power MUX for directly driving an EAM up to 50 Gbit/s
Author
Moller, M. ; Meister, T.F. ; Schmid, R. ; Rupeter, J. ; Rest, M. ; Schopflin, A. ; Rein, H.M.
Author_Institution
AB Halbleiterbauelemente, Ruhr-Univ., Bochum, Germany
Volume
34
Issue
18
fYear
1998
fDate
9/3/1998 12:00:00 AM
Firstpage
1782
Lastpage
1784
Abstract
An SiGe 2:1 time-division multiplexer (MUX) with high output power was developed for directly driving an electroabsorption modulator (EAM) in a 40 Gbit/s optical fibre link. The essential advantages compared to usual driver circuit concepts are discussed and experimentally demonstrated. Measurements on mounted chips show clear output eye diagrams at 40 and 50 Gbit/s with voltage swings of 2.5 and 2 Vpp, respectively
Keywords
Ge-Si alloys; 2 V; 2.5 V; 40 Gbit/s; 50 Gbit/s; SiGe; SiGe IC; SiGe time-division multiplexer; electroabsorption modulator driver circuit; optical fibre link; retiming high-gain power MUX;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981247
Filename
715388
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