• DocumentCode
    1428117
  • Title

    Investigation of the reliability of Unibond and SIMOX N-MOSFETs using charge pumping and noise techniques

  • Author

    Renn, Shing-Hwa ; Jomaah, J. ; Raynaud, C. ; Balestra, F.

  • Author_Institution
    Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
  • Volume
    34
  • Issue
    18
  • fYear
    1998
  • fDate
    9/3/1998 12:00:00 AM
  • Firstpage
    1788
  • Lastpage
    1790
  • Abstract
    Hot-carrier-induced device degradation is thoroughly investigated with various methods for deep submicron fully-depleted Unibond and SIMOX N-MOSFETs. A comparison of the variation of device electric parameters measured in the linear region is proposed. The charge pumping and noise measurements are also performed for studying the device damage at the Si-SiO2 interface and in the gate oxide, respectively. Unibond devices are found to exhibit a much better hot-carrier immunity than SIMOX devices
  • Keywords
    MOSFET; SIMOX; hot carriers; semiconductor device noise; semiconductor device reliability; semiconductor-insulator boundaries; 0.2 micron; N-MOSFETs; SIMOX devices; SOI devices; Si-SiO2; Si/SiO2 interface; Unibond devices; charge pumping; deep submicron MOSFET; device electric parameters; fully-depleted n-MOSFETs; gate oxide; hot-carrier immunity; hot-carrier-induced device degradation; linear region; n-channel MOSFETs; noise techniques; reliability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981222
  • Filename
    715392
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1428117