Title :
Investigation of the reliability of Unibond and SIMOX N-MOSFETs using charge pumping and noise techniques
Author :
Renn, Shing-Hwa ; Jomaah, J. ; Raynaud, C. ; Balestra, F.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
fDate :
9/3/1998 12:00:00 AM
Abstract :
Hot-carrier-induced device degradation is thoroughly investigated with various methods for deep submicron fully-depleted Unibond and SIMOX N-MOSFETs. A comparison of the variation of device electric parameters measured in the linear region is proposed. The charge pumping and noise measurements are also performed for studying the device damage at the Si-SiO2 interface and in the gate oxide, respectively. Unibond devices are found to exhibit a much better hot-carrier immunity than SIMOX devices
Keywords :
MOSFET; SIMOX; hot carriers; semiconductor device noise; semiconductor device reliability; semiconductor-insulator boundaries; 0.2 micron; N-MOSFETs; SIMOX devices; SOI devices; Si-SiO2; Si/SiO2 interface; Unibond devices; charge pumping; deep submicron MOSFET; device electric parameters; fully-depleted n-MOSFETs; gate oxide; hot-carrier immunity; hot-carrier-induced device degradation; linear region; n-channel MOSFETs; noise techniques; reliability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981222
