Title :
Modelling technique for high-voltage MOS devices with BSIM3v3
Author :
Myono, T. ; Nishibe, E. ; Iwatsu, K. ; Kikuchi, S. ; Suzuki, T. ; Sasaki, Y. ; Itoh, K. ; Kobayashi, H.
Author_Institution :
MOS-LSI Div., Sanyo Electr. Co. Ltd., Gunma, Japan
fDate :
9/3/1998 12:00:00 AM
Abstract :
A new technique is presented for modelling high-voltage (HV) MOS devices accurately with the BSIM3v3 SPICE model. Physical meanings different from those of the original BS1M3v3 are assigned to some parameters but without changing its model equations; this method can be applied to any SPICE simulator on which the BS1M3v3 model runs
Keywords :
MIS devices; MOSFET; SPICE; power semiconductor devices; semiconductor device models; BSIM3v3 model; HV MOS devices; SPICE model; SPICE simulator; high-voltage MOS devices; modelling technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981240
