• DocumentCode
    1428124
  • Title

    Modelling technique for high-voltage MOS devices with BSIM3v3

  • Author

    Myono, T. ; Nishibe, E. ; Iwatsu, K. ; Kikuchi, S. ; Suzuki, T. ; Sasaki, Y. ; Itoh, K. ; Kobayashi, H.

  • Author_Institution
    MOS-LSI Div., Sanyo Electr. Co. Ltd., Gunma, Japan
  • Volume
    34
  • Issue
    18
  • fYear
    1998
  • fDate
    9/3/1998 12:00:00 AM
  • Firstpage
    1790
  • Lastpage
    1791
  • Abstract
    A new technique is presented for modelling high-voltage (HV) MOS devices accurately with the BSIM3v3 SPICE model. Physical meanings different from those of the original BS1M3v3 are assigned to some parameters but without changing its model equations; this method can be applied to any SPICE simulator on which the BS1M3v3 model runs
  • Keywords
    MIS devices; MOSFET; SPICE; power semiconductor devices; semiconductor device models; BSIM3v3 model; HV MOS devices; SPICE model; SPICE simulator; high-voltage MOS devices; modelling technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981240
  • Filename
    715393
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1428124