Title :
Transconductance enhancement at low temperatures in deep submicrometre MOSFETs
Author :
Szelag, B. ; Balestra, F.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
fDate :
9/3/1998 12:00:00 AM
Abstract :
The impact of the quasi-Fermi potential gradient on transconductance enhancement at low temperatures is studied for silicon NMOSFETs. Using experimental measurements and two-dimensional numerical simulations. It is shown that the influence of this gradient on transconductance becomes significant in the deep submicrometre range. This effect is explained in terms of reduction of the intrinsic channel length and moving of the Fermi level closer to the band edge at low temperatures
Keywords :
Fermi level; MOSFET; carrier mobility; cryogenic electronics; elemental semiconductors; semiconductor device models; silicon; 2D numerical simulations; Fermi level; Si; Si NMOSFETs; deep submicron MOSFETs; intrinsic channel length reduction; low temperatures; n-channel MOSFET; quasi-Fermi potential gradient; transconductance enhancement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981227
