• DocumentCode
    1428135
  • Title

    Transconductance enhancement at low temperatures in deep submicrometre MOSFETs

  • Author

    Szelag, B. ; Balestra, F.

  • Author_Institution
    Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
  • Volume
    34
  • Issue
    18
  • fYear
    1998
  • fDate
    9/3/1998 12:00:00 AM
  • Firstpage
    1793
  • Lastpage
    1794
  • Abstract
    The impact of the quasi-Fermi potential gradient on transconductance enhancement at low temperatures is studied for silicon NMOSFETs. Using experimental measurements and two-dimensional numerical simulations. It is shown that the influence of this gradient on transconductance becomes significant in the deep submicrometre range. This effect is explained in terms of reduction of the intrinsic channel length and moving of the Fermi level closer to the band edge at low temperatures
  • Keywords
    Fermi level; MOSFET; carrier mobility; cryogenic electronics; elemental semiconductors; semiconductor device models; silicon; 2D numerical simulations; Fermi level; Si; Si NMOSFETs; deep submicron MOSFETs; intrinsic channel length reduction; low temperatures; n-channel MOSFET; quasi-Fermi potential gradient; transconductance enhancement;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981227
  • Filename
    715395
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1428135