DocumentCode :
1428169
Title :
A Two-Stage Charge Transfer Active Pixel CMOS Image Sensor With Low-Noise Global Shuttering and a Dual-Shuttering Mode
Author :
Yasutomi, Keita ; Itoh, Shinya ; Kawahito, Shoji
Author_Institution :
Grad. Sch. of Electron. Sci. & Technol., Shizuoka Univ., Hamamatsu, Japan
Volume :
58
Issue :
3
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
740
Lastpage :
747
Abstract :
A complementary metal-oxide-semiconductor (CMOS) image sensor with low-noise global shuttering and a dual-shuttering mode is presented. The developed two-stage charge transfer pixel enables noise canceling by means of true correlated double sampling. The implemented prototype demonstrates for the first time that a noise level of less than three electrons can be achieved in a global-shutter CMOS image sensor while attaining high shutter efficiency of 99.7%. In the dual-shuttering mode, both a pinned storage diode signal and a floating diffusion signal are used for desirable functions such as wide-dynamic-range imaging, motion detection, and dual consecutive snapshot imaging.
Keywords :
CMOS image sensors; charge exchange; image sampling; interference suppression; CMOS image sensor; complementary metal oxide semiconductor; dual-shuttering mode; floating diffusion signal; global shuttering; kTC noise cancellation; sampling; two-stage charge transfer active pixel; Complementary metal–oxide–semiconductor (CMOS) image sensor; dual shutter; global shutter; low noise; motion detection; two-stage charge transfer; wide dynamic range;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2010.2095856
Filename :
5688448
Link To Document :
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