Title :
A 1.5-V, 1.5-GHz CMOS low noise amplifier
Author :
Shaeffer, Derek K. ; Lee, Thomas H.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fDate :
5/1/1997 12:00:00 AM
Abstract :
A 1.5-GHz low noise amplifier (LNA), intended for use in a global positioning system (GPS) receiver, has been implemented in a standard 0.6-μm CMOS process. The amplifier provides a forward gain (S21) of 22 dB with a noise figure of only 3.5 dB while drawing 30 mW from a 1.5 V supply. In this paper, we present a detailed analysis of the LNA architecture, including a discussion on the effects of induced gate noise in MOS devices
Keywords :
CMOS analogue integrated circuits; Global Positioning System; UHF amplifiers; UHF integrated circuits; integrated circuit noise; radio receivers; 0.6 micron; 1.5 GHz; 1.5 V; 22 dB; 3.5 dB; 30 mW; CMOS low noise amplifier; GPS receiver; LNA architecture; UHF; global positioning system receiver; induced gate noise; CMOS technology; Frequency; Global Positioning System; Low-noise amplifiers; Microwave amplifiers; Noise figure; Power dissipation; Semiconductor device noise; Semiconductor optical amplifiers; Working environment noise;
Journal_Title :
Solid-State Circuits, IEEE Journal of
