DocumentCode :
1428315
Title :
Multi-walled microchannels: free-standing porous silicon membranes for use in /spl mu/TAS
Author :
Tjerkstra, R. Willem ; Gardeniers, Johannes G E ; Kelly, John J. ; van den Berg, A.
Author_Institution :
Debye Res. Inst., Utrecht Univ., Netherlands
Volume :
9
Issue :
4
fYear :
2000
Firstpage :
495
Lastpage :
501
Abstract :
Electrochemically formed porous silicon (PS) can be released from the bulk silicon substrate by underetching at increased current density. Using this technique, two types of channels containing free-standing layers of PS were constructed, which were failed multi-walled microchannels (MW /spl mu/Cs). They can be used in devices like microsieves, microbatteries, and porous electrodes. Two types of MW/spl mu/C were made: the "conventional" version, consisting of two or more coaxially constructed microchannels separated by a suspended PS membrane, and the buried variety, where a PS membrane is suspended halfway in an etched cavity surrounded by silicon nitride walls. The latter is more robust. The pore size of the PS was measured using transmission electron microscopy and field emission gun scanning electron microscopy (FEGSEM) and found to be of the order of 7 nm.
Keywords :
current density; elemental semiconductors; etching; micromachining; micromechanical devices; porous semiconductors; scanning electron microscopy; silicon; transmission electron microscopy; /spl mu/TAS; Si; coaxially constructed microchannels; current density; field emission gun scanning electron microscopy; free-standing layers; free-standing porous membranes; microbatteries; microsieves; multi-walled microchannels; pore size; porous electrodes; transmission electron microscopy; underetching; Biomembranes; Coaxial components; Current density; Electrodes; Electron emission; Etching; Microchannel; Scanning electron microscopy; Silicon; Transmission electron microscopy;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/84.896771
Filename :
896771
Link To Document :
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