• DocumentCode
    1428340
  • Title

    A fatigue-free silicon device structure

  • Author

    Green, W. B.

  • Author_Institution
    Westinghouse Electric Corporation, Youngwood, Pa.
  • Volume
    80
  • Issue
    6
  • fYear
    1961
  • fDate
    6/1/1961 12:00:00 AM
  • Firstpage
    438
  • Lastpage
    438
  • Abstract
    GERMANIUM DEVICES, when correctly used, are capable of essentially infinite life. It was commonly assumed in early higher temperature semiconductor work that silicon devices and those of other materials — such as SiC and the III-V compounds — would have similar life expectancy. However, among the early silicon applications, a number of installations were encountered where unusually high failure rates were recorded. A common feature of these installations was that there were present a large number of “off-on” operations each day.
  • Keywords
    Copper; Fatigue; Junctions; Silicon; Silicon devices; Strain; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Electrical Engineering
  • Publisher
    ieee
  • ISSN
    0095-9197
  • Type

    jour

  • DOI
    10.1109/EE.1961.6433294
  • Filename
    6433294