DocumentCode
1428340
Title
A fatigue-free silicon device structure
Author
Green, W. B.
Author_Institution
Westinghouse Electric Corporation, Youngwood, Pa.
Volume
80
Issue
6
fYear
1961
fDate
6/1/1961 12:00:00 AM
Firstpage
438
Lastpage
438
Abstract
GERMANIUM DEVICES, when correctly used, are capable of essentially infinite life. It was commonly assumed in early higher temperature semiconductor work that silicon devices and those of other materials — such as SiC and the III-V compounds — would have similar life expectancy. However, among the early silicon applications, a number of installations were encountered where unusually high failure rates were recorded. A common feature of these installations was that there were present a large number of “off-on” operations each day.
Keywords
Copper; Fatigue; Junctions; Silicon; Silicon devices; Strain; Thermal resistance;
fLanguage
English
Journal_Title
Electrical Engineering
Publisher
ieee
ISSN
0095-9197
Type
jour
DOI
10.1109/EE.1961.6433294
Filename
6433294
Link To Document