DocumentCode
1428465
Title
Fabrication and performance of GaAs MESFETs with graded channel doping using focused ion-beam implantation
Author
Evason, A.F. ; Cleaver, J.R.A. ; Ahmed, H.
Author_Institution
Dept. of Phys., Cambridge Univ., UK
Volume
9
Issue
6
fYear
1988
fDate
6/1/1988 12:00:00 AM
Firstpage
281
Lastpage
283
Abstract
The dopant concentration in the channel region of GaAs MESFETs is tailored by focused ion-beam implantation, allowing the fabrication of devices with higher power ratings than uniformly doped devices of similar dimensions. With this technique, multiple masking steps during fabrication and avoided, and dopant concentration can be changed with great precision in both position and magnitude. The effect of dopant grading on other device parameters, such as the transconductance and the pinch-off voltage, is reported.<>
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; semiconductor technology; GaAs; MESFETs; dopant grading; focused ion-beam implantation; graded channel doping; performance; pinch-off voltage; semiconductors; transconductance; Annealing; Doping; Fabrication; Gallium arsenide; Implants; Ion beams; MESFETs; Probes; Transconductance; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.717
Filename
717
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