DocumentCode
1428782
Title
High-Power Optically Pumped Semiconductor Laser at 1040 nm
Author
Wang, Tsuei-Lian ; Kaneda, Yushi ; Yarborough, J.M. ; Hader, Jörg ; Moloney, Jerome V. ; Chernikov, Alexej ; Chatterjee, Sangam ; Koch, Stephan W. ; Kunert, Bernardette ; Stolz, Wolfgang
Author_Institution
Univ. of Arizona, Tucson, AZ, USA
Volume
22
Issue
9
fYear
2010
fDate
5/1/2010 12:00:00 AM
Firstpage
661
Lastpage
663
Abstract
We demonstrate near-diffraction limited (M 2 ?? 1.5) output up to 23.8 W with optical-to-optical efficiency 27% and slope efficiency 32.4% and 40.7 W of multimode output from an optically pumped semiconductor laser at 1040 nm. Temperature-dependent photoluminescence measurements confirm accurate epitaxial growth according to the design thereby enhancing the effective gain.
Keywords
III-V semiconductors; aluminium compounds; epitaxial growth; gallium arsenide; light diffraction; optical pumping; photoluminescence; semiconductor lasers; GaAs-AlAs; effective gain enhancement; epitaxial growth; optically pumped semiconductor laser; power 40.7 W; temperature dependent photoluminescence; wavelength 1040 nm; Micro-cavity resonance; optically pumped semiconductor laser (OPSL); power scaling;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2010.2043731
Filename
5422654
Link To Document