Physics-Based Analysis and Simulation of $\hbox {1}/f$ Noise in MOSFETs Under Large-Signal Operation

This paper presents a study on 1/f noise in MOSFETs under large-signal (LS) operation, which is important in CMOS analog and RF integrated circuits. The flicker noise is modeled with noise sources as a perturbation in the semiconductor equations employing McWhorter´s oxide-trapping model and Hooge´s empirical 1/f noise model. Numerical results are shown for 1/f noise in the MOSFET in both small-signal operation and periodic LS operation. It is shown that McWhorter´s model does not give any significant 1/f noise reduction when the oxide traps are distributed uniformly in energy and space. In contrast, Hooge´s model gives almost 6-dB 1/f noise reduction as the gate off-voltage decreases below the threshold voltage. It is found that both models fall short of explaining the noise reduction by more than 6 dB, as observed experimentally in the literature. However, when only one active oxide trap is considered, which generates random telegraph signal (RTS) in drain current, the LS operation gives more than 6-dB low-frequency RTS noise reduction.