DocumentCode :
1429206
Title :
Next-Generation CMOS RF Power Amplifiers
Author :
Hajimiri, Ali
Author_Institution :
The Thomas G. Myers professor of electrical engineering at the California Institute of Technology (Caltech) and director of the Microelectronics Laboratory.
Volume :
12
Issue :
1
fYear :
2011
Firstpage :
38
Lastpage :
45
Abstract :
Ten years ago, it was widely accepted conventional wisdom that wattlevel fully integrated power amplifiers (PAs) were not feasible in standard complimentary metal-oxide-semiconductor (CMOS) technology. Today millions of such devices are commercially produced and shipped every month and are used in hundreds of millions of cellular phones across the world. Such dramatic transition from being considered an impossibility even by most optimistic academics to the obvious future direction to be followed by everyone happened through a series of demonstrations based on new architectures radically different from the known PA topologies applied over more than half a century.
Keywords :
CMOS integrated circuits; mobile handsets; power amplifiers; radiofrequency amplifiers; radiofrequency integrated circuits; CMOS RF power amplifiers; cellular phones; radiofrequency integrated circuits; Amplifiers; CMOS integrated circuits; Impedance; Inductors; Power amplifiers; Radio frequency; Transistors;
fLanguage :
English
Journal_Title :
Microwave Magazine, IEEE
Publisher :
ieee
ISSN :
1527-3342
Type :
jour
DOI :
10.1109/MMM.2010.939321
Filename :
5691059
Link To Document :
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