Title :
High-Efficiency Power Amplifier
Author :
Nemati, Hossein Mashad ; Saad, Paul ; Fager, Christian ; Andersson, Kristoffer
Author_Institution :
Dept. of Microtechnoiogy & Nanosci. (MC2), Chalmers Univ. of Technol., Göteborg, Sweden
Abstract :
In this article, the design of a high-efficiency harmonically tuned GaN HEMT PA has been presented. The PA presents state-of-the-art measured efficiency and gain performance at 3.5 GHz, demonstrating the success of the dedicated transistor modeling, the bare-die mounting and implementation technique, and the circuit design methodology.
Keywords :
HEMT circuits; III-V semiconductors; circuit CAD; circuit tuning; gain measurement; gallium compounds; microwave power amplifiers; GaN; bare-die mounting; circuit design; frequency 3.5 GHz; gain performance measurement; high-efficiency harmonically tuned GaN HEMT PA; power amplifier; transistor modeling; Gallium nitride; HEMTs; Mathematical model; Power amplifiers; Semiconductor device measurement; Solid modeling;
Journal_Title :
Microwave Magazine, IEEE
DOI :
10.1109/MMM.2010.939314
