DocumentCode :
1429342
Title :
Pulse-Width Modulated CMOS Power Amplifiers
Author :
Walling, Jeffrey S. ; Allstot, David J.
Author_Institution :
Dept. of Electr. Eng., Univ. of Washington, WA, USA
Volume :
12
Issue :
1
fYear :
2011
Firstpage :
52
Lastpage :
60
Abstract :
The relentless scaling of CMOS circuits has led to the possibility of completely integrated RF-SOCs, including the PA. A CMOS PA likely will not achieve the same peak output power and efficiency as its counterpart in a III-V technology. It is conceivable, however, that by taking advantage of the strengths of CMOS switching devices, future CMOS PAs can win in terms of average efficiency and, perhaps more importantly, cost. PWM techniques offer one such potential solution, owing to the level of digital integration possible. Because of this, PWM PAs are expected to scale well, and the dynamic range possible with such amplifiers should increase as well because the faster devices will be able to process signals with smaller pulse widths.
Keywords :
CMOS integrated circuits; power amplifiers; pulse width modulation; radiofrequency integrated circuits; system-on-chip; CMOS power amplifiers; CMOS switching devices; pulse width modulation; radiofrequency system-on-chip; CMOS integrated circuits; Frequency modulation; Power amplifiers; Power generation; Pulse width modulation; Switches;
fLanguage :
English
Journal_Title :
Microwave Magazine, IEEE
Publisher :
ieee
ISSN :
1527-3342
Type :
jour
DOI :
10.1109/MMM.2010.939304
Filename :
5691130
Link To Document :
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