Title :
High-speed monolithic GaInAs pinFET
Author :
Miura, Shun ; Mikawa, T. ; Fujii, Teruya ; Wada, O.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi
fDate :
3/31/1988 12:00:00 AM
Abstract :
A monolithic planar structure pin photodiode/field-effect transistor (pinFET) consisting of a low capacitance InP/GaInAs embedded pin photodiode and an AlInAs/GaInAs FET has been developed for long wavelength optical communications. Very high bitrate response capability of over 8 Gbit/s and good receiver performance at 2 Gbit/s have both been demonstrated
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated circuit technology; integrated optoelectronics; optical communication equipment; photodetectors; photodiodes; 2 Gbit/s; 8 Gbit/s; AlInAs-GaInAs transistor; InP-GaInAs photodiode; high bitrate; long wavelength optical communications; monolithic GaInAs pinFET; monolithic planar structure; pin photodiode/field-effect transistor; receiver performance;
Journal_Title :
Electronics Letters
