Title :
Low Noise 64-Channel ASIC for AC and DC Coupled Strip Detectors
Author :
Grybos, Pawel ; Kachel, Maciej ; Kmon, Piotr ; Szczygiel, Robert ; Taguchi, Takeyoshi
Author_Institution :
Dept. of Meas. & Instrum., Univ. of Sci. & Technol.-AGH, Krakow, Poland
Abstract :
A 64-channel ASIC (SXDR64) aimed to work with both AC and DC coupled detectors (Si, CdTe, GaAs), in a single photon counting mode with an energy window has been developed. Every channel of the ASIC consists of a charge sensitive amplifier, a pole-zero cancellation circuit, a 4th order shaper with programmable gain from 14 μV/e- to 50 μV/e- and peaking time from 115 ns to 380 ns, a base-line restorer, two independent discriminators, and two 20-bit counters. Control and readout of the chip are done using on-chip LVDS drivers/receivers. The ASIC can work with input leakage currents in the range from -10 nA up to 7 nA. The ENC obtained with an AC-coupled Si detector is 120 e- for a peaking time Tp=115 ns and Cdet=1.2 pF. With a DC-coupled CdTe detector, the ENC is 210 e- rms for a peaking time Tp=380 ns and Cdet=2 pF and the leakage current Idleak=0.15 nA. The implemented trim DACs at the discriminator inputs allows to minimize the effective threshold spread to 8 e- rms (at one sigma level). The ASIC is designed in a CMOS 0.35 μm technology and its total area is 4800×5000 μm2.
Keywords :
X-ray imaging; application specific integrated circuits; nuclear electronics; readout electronics; silicon radiation detectors; 20-bit counters; 64-channel ASIC; AC coupled strip detector; AC-coupled Si detector; CMOS technology; DC coupled strip detector; DC-coupled CdTe detector; base-line restorer; charge sensitive amplifier; chip control; chip readout; energy window; input leakage currents; on-chip LVDS drivers; on-chip LVDS receivers; peaking time; pole-zero cancellation circuit; programmable gain; single photon counting mode; size 4800 mum; size 5000 mum; DC coupled semiconductor detector; X-ray imaging; multichannel ASIC;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2099132