DocumentCode :
1429734
Title :
Hollow-Cathode CVD 
Plasma Treatment for Performance and Reliability Improvement of LTPS-TFTs
Author :
Fan, Ching-Lin ; Lin, Yi-Yan ; Wang, Shou-Kuan
Author_Institution :
Grad. Inst. of Electro-Opt. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
Volume :
33
Issue :
3
fYear :
2012
fDate :
3/1/2012 12:00:00 AM
Firstpage :
387
Lastpage :
389
Abstract :
This letter presents a scheme for N2 plasma treatment using a hollow-cathode chemical vapor deposition (HCCVD) system. The N2 plasma treatment of the channel layer using an HCCVD system can simultaneously offer high-efficiency passivation and prevent plasma damage because energetic ions and hot electrons oscillate inside the hollow-cathode tube. In addition, low-temperature polysilicon thin-film transistor (TFT) reliability is improved because of the formation of strong Si-N bonds. We believe that the proposed scheme is the first to use HCCVD to offer a high-efficiency and low-damage passivation technology for improving the electrical characteristics of poly-Si TFTs.
Keywords :
elemental semiconductors; nitrogen; plasma CVD; semiconductor device reliability; silicon; thin film transistors; N2; Si-N; channel layer; chemical vapor deposition system; electrical characteristics; energetic ions; hollow-cathode CVD plasma treatment; hot electrons; low-damage passivation technology; low-temperature polysilicon thin-film transistor reliability; plasma damage prevention; Logic gates; Passivation; Plasmas; Reliability; Rough surfaces; Surface roughness; $hbox{N}_{2}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2179284
Filename :
6138277
Link To Document :
