Title :
Insights into carrier recombination processes in 1.3 μm GaInNAs-based semiconductor lasers attained using high pressure
Author :
Fehse, R. ; Sweeney, S.J. ; Adams, A.R. ; O´Reilly, E.P. ; Egorov, A.Y. ; Riechert, H. ; Illek, S.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
fDate :
1/18/2001 12:00:00 AM
Abstract :
The threshold current of 1.3 μm GaInNAs lasers increases by ~30%, up to a pressure of 1 GPa compared with a decrease of ~15% for Auger-dominated InGaAsP devices, indicating that direct band-to-band Anger recombination is not important in these materials. The lasing energy varies sub-linearly with pressure, indicative of the increasing interaction of the N-level with the conduction band
Keywords :
Auger effect; III-V semiconductors; conduction bands; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; laser beams; semiconductor lasers; 1 GPa; 1.3 mum; Auger-dominated devices; GaInNAs; GaInNAs lasers; GaInNAs-based semiconductor lasers; N-level; carrier recombination processes; conduction band; direct band-to-band Anger recombination; high pressure; lasing energy; sub-linear variation; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010049
