Title :
Monolithic VCSEL with InGaAsN active region emitting at 1.28 μm and CW output power exceeding 500 μW at room temperature
Author :
Steinle, G. ; Riechert, H. ; Egorov, A.Yu.
Author_Institution :
Corp. Res. Photonics, Infineon Technol. AG, Munich, Germany
fDate :
1/18/2001 12:00:00 AM
Abstract :
The authors report on electrically pumped MBE-grown VCSELs on GaAs substrate with an InGaAsN active region. Emitting above 1.28 μm with record characteristics. The CW output power at room temperature exceeds 500 μW with an initial slope efficiency of 0.17 W/A
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; molecular beam epitaxial growth; optical fabrication; semiconductor lasers; surface emitting lasers; 1.28 mum; 298 K; 500 muW; CW output power; GaAs; GaAs substrate; InGaAsN; InGaAsN active region; electrically pumped MBE-grown VCSELs; initial slope efficiency; monolithic VCSEL; record characteristics; room temperature; vertical cavity surface emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010098
