Title :
From Layout Directly to Simulation: A First-Principle-Guided Circuit Simulator of Linear Complexity and Its Efficient Parallelization
Author :
He, Qing ; Chen, Duo ; Jiao, Dan
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
4/1/2012 12:00:00 AM
Abstract :
In this paper, guided by electromagnetics-based first principles, the authors develop a transient simulator that allows for the simulation of an integrated circuit including both nonlinear devices and the layout of the linear network in linear complexity. The proposed circuit simulator rigorously captures the coupling between nonlinear circuits and the linear network. In addition, it bypasses the step of circuit extraction, producing a resistor-inductor-capacitor representation of the linear network without any numerical computation. Moreover, it permits an almost embarrassingly parallel implementation on a many-core computing platform, and hence enabling linear speedup. Application to die-package co-simulation as well as very large-scale on-chip circuits involving over complementary metal-oxide semiconductor transistors and interconnects having hundreds of millions of unknowns has demonstrated the superior performance of the proposed first-principle-guided circuit simulator.
Keywords :
CMOS integrated circuits; circuit simulation; linear network synthesis; complementary metal-oxide semiconductor transistors; die-package cosimulation; electromagnetics-based first principles; first-principle-guided circuit simulator; integrated circuit; linear complexity; linear network; nonlinear devices; resistor-inductor-capacitor representation; transient simulator; Equations; Integrated circuit modeling; Layout; Mathematical model; Nonlinear circuits; Vectors; Circuit simulation; electromagnetic simulation; linear complexity; linear speedup; multi-core; nonlinear circuits; parallel computing; time-domain finite-element method;
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCPMT.2011.2179547