Title :
High performance, large area, uncooled detectors for mid-infrared wavelengths
Author :
Crowder, J.G. ; Elliott, C.T. ; Hardaway, H.R.
Author_Institution :
Dept. of Phys., Heriot-Watt Univ., Edinburgh, UK
fDate :
1/18/2001 12:00:00 AM
Abstract :
The demonstration of D* in excess of 2×109 cmHz 1/2W-1 from 1 mm diameter, uncooled, semiconductor diode detectors with a peak wavelength response at 5 μm is reported. They are based on heterostructures in the In1-xAlxSb alloy system and employ hyperspherical optical immersion. The devices have sufficiently high impedance for convenient amplifier matching. Without signal-to-noise degradation, and the potential for high frequency response above 100 kHz
Keywords :
III-V semiconductors; aluminium compounds; frequency response; indium compounds; infrared detectors; optical noise; 1 mm; 5 mum; In1-xAlxSb alloy system; InAlSb; amplifier matching; heterostructures; high frequency response; high impedance; high performance large area uncooled IR detectors; hyperspherical optical immersion; mid-infrared wavelengths; peak wavelength; peak wavelength response; semiconductor diode detectors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010072